Growth and Characterization of Lead Sulphide Thin Film for Solar Cell Fabrication

dc.creatorUhuegbu, C. C.
dc.date2011
dc.date.accessioned2025-03-06T10:37:04Z
dc.descriptionLead Sulphide thin film was deposited on glass substrate prepared from lead acetate and thiourea solution using solut ion growth technique. XRD studies show that, films prepared are in nanocry s tal l ine range. Also the diffraction peaks are found to be in good agreement with standard ASTM data. Optical studies show that the band gap energy is in the range of 0.75eV – 1.98eV. SEM studies show that the film surface have uni form grains and the grain size obtained are of the order of 15-20 nm and this is in agreement with the calculated values from the XRD result . Electrical resistance is in the range of 150 Giga Ohms. Vicker’ s
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dc.identifierhttp://eprints.covenantuniversity.edu.ng/504/
dc.identifier.urihttp://itsupport.cu.edu.ng:4000/handle/123456789/29100
dc.languageen
dc.subjectQC Physics
dc.titleGrowth and Characterization of Lead Sulphide Thin Film for Solar Cell Fabrication
dc.typeArticle

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